Datasheet Details
| Part number | 2N6574 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.95 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N6574-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N6574 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.95 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N6574-InchangeSemiconductor.pdf |
|
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·Collector-Emitter Sustaining Voltage- : VCEO = 275V(Min.) ·Fast Switching Speed ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width- modulated regulators and a variety of power switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 275 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2N6574 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=3A;
IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 7A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6574 | Bipolar NPN Device | Seme LAB |
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