Datasheet Details
| Part number | 2N6609 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 137.67 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2N6609-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product.
| Part number | 2N6609 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 137.67 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2N6609-InchangeSemiconductor.pdf |
|
|
|
·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = -8A ·Low Saturation Voltage- : VCE(sat)= -1.4V(Max)@ IC = -8A ·plement to Type 2N3773 APPLICATIONS ·Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEX Collector-Emitter Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -16 A ICP Collector Current-Peak -30 A IB Base Current-Continuous -4 A IBP Base Current-Peak -15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBO
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6609 | COMPLEMENTARY POWER TRANSISTORS | ON Semiconductor |
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2N6609 | COMPLEMENTARY SILICON POWER TRANSITORS | Central Semiconductor |
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2N6609 | Silicon PNP Transistor | NTE |
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2N6609 | Complementary Power Transistor | Multicomp |
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