Datasheet Details
| Part number | 2N6759 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 41.34 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2N6759-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | 2N6759 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 41.34 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2N6759-InchangeSemiconductor.pdf |
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·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 350 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 4.5 A Total Dissipation@TC=25℃ 75 W Max.
Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.67 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2N6759 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6759 | N-Channel Power MOSFET | Fairchild Semiconductor |
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