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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N6761
DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive reqirements
APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
450 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃ 4.0 A
Total Dissipation@TC=25℃
75 W
Max.
2N6761 Datasheet
