2N6770
DESCRIPTION
- VGS Rated at ±20V
- Silicon Gate for fast switching speeds
- IDSS 、RDS(ON) ,specified at elevated temperature
- Low drive requirements
APPLICATIONS designed for high voltage ,high speed application ,such as off-line switching power applies,UPS,AC and DC motor controls , relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
500 V
Gate-Source Voltage
±20
Drain Current-continuous@ TC=37℃ 12 A
Total Dissipation@TC=25℃
150 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 0.83 ℃/W isc website：.iscsemi.cn
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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification
- ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS...
