Datasheet Details
| Part number | 2N6837 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.52 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N6837-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6837.
| Part number | 2N6837 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.52 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N6837-InchangeSemiconductor.pdf |
|
|
|
· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.
They are particularly suited for line operated switch-mode applications.
Typical applications: ·Switching regulators ·Inverters ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 15 A IBM Base Current-Peak 20 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.7 UNIT ℃/W isc website：.iscsemi.
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