Datasheet Details
| Part number | 2N6898 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 41.65 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2N6898-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc P-Channel MOSFET Transistor isc Product.
| Part number | 2N6898 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 41.65 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2N6898-InchangeSemiconductor.pdf |
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·SOA is power-dissipation limited ·Nanosecond switching speeds ·Linear transfer characteristics ·High input impedance ·Majority carrier device APPLICATIONS · The 2N6898 is designed for application such as switching regulators,switching converters,motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-driver power ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) -100 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ -25 A Total Dissipation@TC=25℃ 150 W Max.
Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.83 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro .fineprint.cn INCHANGE Semiconductor isc P-Channel Mosfet Transistor isc Product Specification 2N6898 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS;
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