2SA1050
2SA1050 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
DESCRIPTION
- High Current Capability
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min.)
- plement to Type 2SC2460
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifer and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
VCEO Collector-Emitter Voltage
-140
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-12
℃
Tstg
Storage Temperature
-55~150 ℃ isc website：.iscsemi....
