Datasheet Details
| Part number | 2SA1050 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.22 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1050 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor 2SA1050.
| Part number | 2SA1050 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.22 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1050 Download (PDF) |
|
|
|
·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min.) ·Complement to Type 2SC2460 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifer and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1050 | Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
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