Datasheet Details
| Part number | 2SA1062 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.88 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1062_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1062.
| Part number | 2SA1062 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.88 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1062_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Power Dissipation ·plement to Type 2SC2486 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1062 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1062 | TRANSISTOR | Panasonic Semiconductor |
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2SA1062 | Silicon POwer Transistors | SavantIC |
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