Datasheet Details
| Part number | 2SA1108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.46 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1108_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1108.
| Part number | 2SA1108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.46 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1108_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -130V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1108 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1108 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1109 | POWER TRANSISTOR |
| 2SA1110 | POWER TRANSISTOR |
| 2SA1111 | POWER TRANSISTOR |
| 2SA1112 | POWER TRANSISTOR |