Datasheet Details
| Part number | 2SA1109 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.36 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1109_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1109.
| Part number | 2SA1109 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.36 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1109_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -14 A 200 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1109 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |
| 2SA1110 | POWER TRANSISTOR |
| 2SA1111 | POWER TRANSISTOR |
| 2SA1112 | POWER TRANSISTOR |