2SA1109 datasheet by Inchange Semiconductor.
| Part number | 2SA1109 |
|---|---|
| Datasheet | 2SA1109_InchangeSemiconductor.pdf |
| File Size | 208.36 KB |
| Manufacturer | Inchange Semiconductor |
| Description | POWER TRANSISTOR |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and high power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1109 | SILICON POWER TRANSISTOR | SavantIC |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |
| 2SA1110 | POWER TRANSISTOR |
| 2SA1111 | POWER TRANSISTOR |
| 2SA1112 | POWER TRANSISTOR |
