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2SA1111 - POWER TRANSISTOR

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Part number 2SA1111
Manufacturer Inchange Semiconductor
File Size 220.25 KB
Description POWER TRANSISTOR
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Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min) Good Linearity of hFE Complement to Type 2SC2591 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency drivers and high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collec

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