2SA1112
2SA1112 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
V(BR)CEO= -180V (Min)
- Good Linearity of h FE
- plement to Type 2SC2592
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio frequency drivers and high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
VCEO Collector-Emitter Voltage
-180
VEBO
Emitter-Base Voltage
-5.0
Collector Current-Continuous
-1
Collector Current-Peak
-1.5
Collector Power Dissipation
Junction Temperature
℃
Tstg
Storage Temperature...
