Datasheet Details
| Part number | 2SA1112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.31 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1112_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1112.
| Part number | 2SA1112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.31 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1112_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2592 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency drivers and high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -1.5 A PC Collector Power Dissipation 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1112 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100μA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1112 | (2SA1111 / 2SA1112) SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1110 | POWER TRANSISTOR |
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| 2SA1117 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |