Datasheet Details
| Part number | 2SA1133A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.31 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1133A_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1133A.
| Part number | 2SA1133A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.31 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1133A_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V (Min) ·Large Collector Power Dissipation ·plement to Type 2SC2660A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A PC Collector Power Dissipation 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1133A | SILICON POWER TRANSISTOR | SavantIC |
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2SA1133 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1133 | POWER TRANSISTOR |
| 2SA1135 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |
| 2SA1109 | POWER TRANSISTOR |