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2SA1184 - POWER TRANSISTOR

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Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min) Complement to Type 2SC2824 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio frequency power amplifier applications.

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Datasheet Details

Part number 2SA1184
Manufacturer Inchange Semiconductor
File Size 216.48 KB
Description POWER TRANSISTOR
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isc Silicon PNP Power Transistor 2SA1184 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min) ·Complement to Type 2SC2824 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.1 A 1 W 15 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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