Datasheet Details
| Part number | 2SA1184 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.48 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1184_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1184.
| Part number | 2SA1184 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.48 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1184_InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min) ·plement to Type 2SC2824 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.1 A 1 W 15 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1184 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1184 | Silicon PNP Transistor | Toshiba |
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2SA1184 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1180 | POWER TRANSISTOR |
| 2SA1185 | POWER TRANSISTOR |
| 2SA1186 | POWER TRANSISTOR |
| 2SA1187 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |