Datasheet Details
| Part number | 2SA1186 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.21 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1186_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1186 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.21 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1186_InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·plement to Type 2SC2837 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SA1186 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1186 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO VCE(sat) Collector-Emitter Voltage Collector-Emitter Voltage Breakdown IC= -25mA ;
IB= 0 Saturation IC= -5.0A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1186 | Silicon PNP Epitaxial Planar Transistor | Sanken electric |
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2SA1186 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1180 | POWER TRANSISTOR |
| 2SA1184 | POWER TRANSISTOR |
| 2SA1185 | POWER TRANSISTOR |
| 2SA1187 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |