Datasheet Details
| Part number | 2SA1249 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.62 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1249_InchangeSemiconductor.pdf |
|
|
|
Overview: isc Silicon PNP Power Transistor 2SA1249.
| Part number | 2SA1249 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.62 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1249_InchangeSemiconductor.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V (Min) ·Large Current Capacity ·plement to Type 2SC3117 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV sound output, converters, inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2.5 A 1 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SA1249 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device | |
![]() |
2SA1249 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1242 | Silicon PNP Power Transistor |
| 2SA1205 | POWER TRANSISTOR |
| 2SA1209 | POWER TRANSISTOR |
| 2SA1214 | Silicon PNP Power Transistor |
| 2SA1215 | POWER TRANSISTOR |
| 2SA1217 | POWER TRANSISTOR |
| 2SA1225 | Silicon PNP Transistor |
| 2SA1227 | POWER TRANSISTOR |
| 2SA1227A | POWER TRANSISTOR |
| 2SA1232 | POWER TRANSISTOR |