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Inchange Semiconductor
2SA1250
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) - Low Collector Saturatioin Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -5A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general-purpose power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 VCEO Collector-Emitter Voltage -200 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -8 Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -2 ℃ Tstg Storage Temperature...