Datasheet Details
| Part number | 2SA1276 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.79 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1276_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1276.
| Part number | 2SA1276 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.79 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1276_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·plement to Type 2SC3230 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1276 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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