Datasheet Details
| Part number | 2SA1293 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.06 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1293_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1293.
| Part number | 2SA1293 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.06 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1293_InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@IC= -3A ·Fast Switching Speed ·plement to Type 2SC3258 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1293 | TRANSISTOR | Toshiba Semiconductor |
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2SA1293 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1290 | POWER TRANSISTOR |
| 2SA1291 | POWER TRANSISTOR |
| 2SA1292 | POWER TRANSISTOR |
| 2SA1205 | POWER TRANSISTOR |
| 2SA1209 | POWER TRANSISTOR |
| 2SA1214 | Silicon PNP Power Transistor |
| 2SA1215 | POWER TRANSISTOR |
| 2SA1217 | POWER TRANSISTOR |
| 2SA1225 | Silicon PNP Transistor |
| 2SA1227 | POWER TRANSISTOR |