Datasheet Details
| Part number | 2SA1305 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.94 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1305_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1305.
| Part number | 2SA1305 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.94 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1305_InchangeSemiconductor.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3297 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Car radio and car stereo output stage applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.3 A 15 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1305 | Silicon PNP Transistor | Toshiba |
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2SA1305 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
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| 2SA1329 | POWER TRANSISTOR |
| 2SA1332 | POWER TRANSISTOR |
| 2SA1333 | POWER TRANSISTOR |
| 2SA1352 | Silicon PNP Power Transistor |