Datasheet Details
| Part number | 2SA1332 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.12 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1332_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1332 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.12 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1332_InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -0.15 A 2 W 20 150 ℃ -55~150 ℃ 2SA1332 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1332 | SILICON POWER TRANSISTOR | SavantIC |
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|---|---|
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