Datasheet Details
| Part number | 2SA1333 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.32 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1333_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1333 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.32 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1333_InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1333 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1333 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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