Datasheet Details
| Part number | 2SA1395 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.12 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1395-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1395.
| Part number | 2SA1395 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.12 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1395-InchangeSemiconductor.pdf |
|
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·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -1A ·High Switching Speed ·Complement to Type 2SC3567 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and high frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 15 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1A;
IB= -0.1A, L=1mH VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1395 | PNP SILICON POWER TRANSISTOR | NEC |
| Part Number | Description |
|---|---|
| 2SA1396 | POWER TRANSISTOR |
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