Datasheet Details
| Part number | 2SA1513 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.96 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1513_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1513.
| Part number | 2SA1513 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.96 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1513_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Currrent Capacity ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -12A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 60 W 3.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1513 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1513 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SA1567 | POWER TRANSISTOR |
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| 2SA1593 | Silicon PNP Power Transistor |