Datasheet Summary
isc Silicon PNP Power Transistors
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A
- Good Linearity of hFE
- plement to Type 2SC3944/A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low-frequency driver and high power amplifi- cation, is optimum for the driver-stage of a 60W to 100 W output...
