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isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A
·Good Linearity of hFE ·Complement to Type 2SC3944/A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-frequency driver and high power amplifi-
cation, is optimum for the driver-stage of a 60W to 100 W output amplifier.