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2SA1535A Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistors.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A ·Good Linearity of hFE ·plement to Type 2SC3944/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency driver and high power amplifi- cation, is optimum for the driver-stage of a 60W to 100 W output amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SA1535 -150 VCBO Collector-Base Voltage V 2SA1535A -180 2SA1535 -150 VCEO Collector-Emitter Voltage V 2SA1535A -180 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IC Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -1.5 A 15 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1535/A isc website: .iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2SA1535/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage 2SA1535 2SA1535A IC= -50mA ;

2SA1535A Distributor