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2SA1592 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·High breakdown voltage and large current capacity ·Fast switching speed ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·plementary to 2SC4134 APPLICATIONS ·Power supplies,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.0 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -2.0 A 10 W 0.8 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1592 isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -0.4A;

IB= -40mA VBE(sat) Base-Emitter Saturation Voltage IC= -0.4A;

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