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2SA1601 Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor 2SA1601.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -7.5A ·Large Current Capability-IC= -15A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for mid-switching applications, and is ideal for use as a ramp driver.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -30 A IB Base Current-Continuous -2 A IBM Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 45 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.77 ℃/W isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7.5A;

2SA1601 Distributor