Datasheet Details
| Part number | 2SA1606 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.58 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1606-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1606.
| Part number | 2SA1606 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.58 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1606-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC4159 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6.0 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1606 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SA1600 | POWER TRANSISTOR |
| 2SA1601 | POWER TRANSISTOR |
| 2SA1615 | Silicon PNP Power Transistor |
| 2SA1615-Z | Silicon PNP Power Transistor |
| 2SA1633 | POWER TRANSISTOR |
| 2SA1634 | POWER TRANSISTOR |
| 2SA1635 | POWER TRANSISTOR |
| 2SA1640 | POWER TRANSISTOR |
| 2SA1643 | POWER TRANSISTOR |
| 2SA1644 | POWER TRANSISTOR |