2SA1606 Description
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) ·Large Current Capacity ·plement to Type 2SC4159 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER...