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2SA1606 - Silicon PNP Power Transistor

General Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) Large Current Capacity Complement to Type 2SC4159 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, AF power amplifier, 100W ou

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isc Silicon PNP Power Transistor 2SA1606 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC4159 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6.0 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.