Datasheet Details
| Part number | 2SA1633 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.78 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1633_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1633.
| Part number | 2SA1633 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.78 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1633_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·High Power Dissipation ·High Current Capacity ·Complement to Type 2SC4278 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1633 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1634 | POWER TRANSISTOR |
| 2SA1635 | POWER TRANSISTOR |
| 2SA1600 | POWER TRANSISTOR |
| 2SA1601 | POWER TRANSISTOR |
| 2SA1606 | Silicon PNP Power Transistor |
| 2SA1615 | Silicon PNP Power Transistor |
| 2SA1615-Z | Silicon PNP Power Transistor |
| 2SA1640 | POWER TRANSISTOR |
| 2SA1643 | POWER TRANSISTOR |
| 2SA1644 | POWER TRANSISTOR |