Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min)
High Power Dissipation
High Current Capacity
Complement to Type 2SC4278
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
For audio and general purpose applications
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isc Silicon PNP Power Transistor
2SA1633
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min) ·High Power Dissipation ·High Current Capacity ·Complement to Type 2SC4278 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-10
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website： www.iscsemi.
2SA1633 Datasheet
