Datasheet Details
| Part number | 2SA1640 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.43 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1640_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1640.
| Part number | 2SA1640 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.43 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1640_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ (IC= -3A, IB= -0.1A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, driver and power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1640 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1643 | POWER TRANSISTOR |
| 2SA1644 | POWER TRANSISTOR |
| 2SA1645 | POWER TRANSISTOR |
| 2SA1645-Z | Silicon PNP Power Transistor |
| 2SA1646 | POWER TRANSISTOR |
| 2SA1646-Z | Silicon PNP Power Transistor |
| 2SA1647 | Silicon PNP Power Transistor |
| 2SA1647-Z | Silicon PNP Power Transistor |
| 2SA1648-Z | Silicon PNP Power Transistor |
| 2SA1649 | Silicon PNP Power Transistor |