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2SA1643 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.3A) Complement to Type 2SC4327 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for p

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isc Silicon PNP Power Transistor 2SA1643 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.3A) ·Complement to Type 2SC4327 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -7 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.