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2SA1645 - POWER TRANSISTOR

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A) Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -4A, IB= -0.2A) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -4A, IB= -0.2A) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for highcurrent switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -7.