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2SA1646-Z - Silicon PNP Power Transistor

General Description

Fast Switching Speed Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@IC= -6A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power transistor is developed for high-speed switching and

Key Features

  • a very low VCE(sat), is ideal for use in switching power supplies,DC/DC converters,motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high current switching.

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isc Silicon PNP Power Transistor DESCRIPTION ·Fast Switching Speed ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@IC= -6A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a very low VCE(sat), is ideal for use in switching power supplies,DC/DC converters,motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high current switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.