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2SA1651 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage VCEO= -100V(Min) Fast switching speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage VCEO= -100V(Min) ·Fast switching speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -14 A IB Base Current-Continuous Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25℃ TJ Junction Temperature -3.5 A 30 W 1.5 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1651 isc website： www.