Datasheet Details
| Part number | 2SA1651 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.04 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1651_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1651 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.04 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1651_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage VCEO= -100V(Min) ·Fast switching speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -14 A IB Base Current-Continuous Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25℃ TJ Junction Temperature -3.5 A 30 W 1.5 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1651 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1651 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A;
IB= -0.2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A;
IB= -0.3A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1651 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1657 | Silicon PNP Power Transistor |
| 2SA1658 | POWER TRANSISTOR |
| 2SA1659 | POWER TRANSISTOR |
| 2SA1659A | POWER TRANSISTOR |
| 2SA1600 | POWER TRANSISTOR |
| 2SA1601 | POWER TRANSISTOR |
| 2SA1606 | Silicon PNP Power Transistor |
| 2SA1615 | Silicon PNP Power Transistor |
| 2SA1615-Z | Silicon PNP Power Transistor |
| 2SA1633 | POWER TRANSISTOR |