Datasheet Details
| Part number | 2SA1658 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.45 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1658_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1658.
| Part number | 2SA1658 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.45 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1658_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage VCEO= -30V(Min) ·Complement to Type 2SC4369 ·Full-mold package that does not require an insulating board or bushing when mounting.
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.3 A 15 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1658 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1651 | POWER TRANSISTOR |
| 2SA1657 | Silicon PNP Power Transistor |
| 2SA1659 | POWER TRANSISTOR |
| 2SA1659A | POWER TRANSISTOR |
| 2SA1600 | POWER TRANSISTOR |
| 2SA1601 | POWER TRANSISTOR |
| 2SA1606 | Silicon PNP Power Transistor |
| 2SA1615 | Silicon PNP Power Transistor |
| 2SA1615-Z | Silicon PNP Power Transistor |
| 2SA1633 | POWER TRANSISTOR |