2SA1658 - POWER TRANSISTOR

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage VCEO= -30V(Min) Complement to Type 2SC4369

board or bushing when mounting.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for

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2SA1658 power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SA1658
Manufacturer	Inchange Semiconductor
File Size	214.45 KB
Description	POWER TRANSISTOR
Datasheet	2SA1658 Datasheet

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isc Silicon PNP Power Transistor 2SA1658 DESCRIPTION ·Collector-Emitter Breakdown Voltage VCEO= -30V(Min) ·Complement to Type 2SC4369 ·Full-mold package that does not require an insulating board or bushing when mounting. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.3 A 15 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.