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2SA1667 - POWER TRANSISTOR

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) DC Current Gain- : hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) Complement to Type 2SC4381 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,au

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Datasheet Details

Part number 2SA1667
Manufacturer Inchange Semiconductor
File Size 208.85 KB
Description POWER TRANSISTOR
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isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4381 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.
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