Datasheet Details
| Part number | 2SA1671 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.10 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1671_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1671.
| Part number | 2SA1671 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.10 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1671_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4386 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
IB= -0.3A ICBO Collector Cutoff Current VCB= -120V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1671 | SILICON POWER TRANSISTOR | SavantIC |
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