Datasheet Details
| Part number | 2SA1679 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.95 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1679_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1679.
| Part number | 2SA1679 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.95 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1679_InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -2.5A ·Large Current Capability-IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for mid-switching applications, and is ideal for use as a ramp driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current-Continuous -1.5 A IBM Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -0.05A;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2.5A;
Compare 2SA1679 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1679 | Switching Power Transistor | Shindengen Electric Mfg.Co.Ltd |
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2SA1679 | SILICON POWER TRANSISTOR | SavantIC |
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