Datasheet Summary
isc Silicon PNP Power Transistor
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V(Min)
- Good Linearity of hFE
- plement to Type 2SC4467
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio and general purpose...
