Datasheet4U Logo Datasheet4U.com

2SA1694 Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor 2SA1694.

General Description

·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4467 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: www.iscsemi.com 1 isc&iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;

IB= -0.3A ICBO Collector Cutoff Current VCB= -120V ;

2SA1694 Distributor