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2SA1695 Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor.

General Description

·High Collector-Emitter Breakdown VoltageV(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4468 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -4 A PC 100 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ www.DataSheet4U.com INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1695 TYP.

MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;

IB= 0 -140 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;

2SA1695 Distributor