High Collector-Emitter Breakdown VoltageV(BR)CEO= -140V(Min)
Good Linearity of hFE
Complement to Type 2SC4468
APPLICATIONS
Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-140
V
VC
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INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
2SA1695
DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4468
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-10
A
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
-4
A
PC
100
W
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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2SA1695 Datasheet
