Datasheet Summary
isc Silicon PNP Power Transistor
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO= -60V(Min)
- High DC Current Gain-
: hFE= 100(Min)@ (VCE= -2V , IC= -1A)
- Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- This type of power transistor is developed for high-speed switching and Features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and...
