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2SA1757 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) High Switching Speed Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon PNP Power Transistor 2SA1757 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Switching Speed ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.