Datasheet Details
| Part number | 2SA1757 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.41 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1757_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1757.
| Part number | 2SA1757 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.41 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1757_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Switching Speed ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -10 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1757 | PNP Transistor | Rohm |
| Part Number | Description |
|---|---|
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