Datasheet Details
| Part number | 2SA1907 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.28 KB |
| Description | Power Transistor |
| Datasheet | 2SA1907_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1907.
| Part number | 2SA1907 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.28 KB |
| Description | Power Transistor |
| Datasheet | 2SA1907_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5099 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
IB= -0.2A ICBO Collector Cutoff Current VCB= -80V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1907 | Silicon PNP Transistor | Sanken electric |
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2SA1907 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1908 | Power Transistor |
| 2SA1909 | Power Transistor |
| 2SA1930 | Silicon PNP Power Transistor |
| 2SA1939 | Power Transistor |
| 2SA1940 | POWER TRANSISTOR |
| 2SA1941 | POWER TRANSISTOR |
| 2SA1942 | Power Transistor |
| 2SA1943 | POWER TRANSISTOR |
| 2SA1962 | POWER TRANSISTOR |
| 2SA1986 | Power Transistor |