Datasheet Details
| Part number | 2SA1909 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.02 KB |
| Description | Power Transistor |
| Datasheet | 2SA1909_InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon PNP Power Transistor 2SA1909.
| Part number | 2SA1909 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.02 KB |
| Description | Power Transistor |
| Datasheet | 2SA1909_InchangeSemiconductor.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5101 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
IB= -0.5A ICBO Collector Cutoff Current VCB= -140V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1909 | Silicon PNP Transistor | Sanken electric |
 |
2SA1909 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1907 | Power Transistor |
| 2SA1908 | Power Transistor |
| 2SA1930 | Silicon PNP Power Transistor |
| 2SA1939 | Power Transistor |
| 2SA1940 | POWER TRANSISTOR |
| 2SA1941 | POWER TRANSISTOR |
| 2SA1942 | Power Transistor |
| 2SA1943 | POWER TRANSISTOR |
| 2SA1962 | POWER TRANSISTOR |
| 2SA1986 | Power Transistor |