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2SA2031 - Power Transistor

General Description

Large current capacitance Wide ASO and high durability against breakdown Complement to Type 2SC5669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 230V/15A AF100W output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

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isc Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance ·Wide ASO and high durability against breakdown ·Complement to Type 2SC5669 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·230V/15A AF100W output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -30 A 140 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SA2031 isc website: www.iscsemi.