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2SA2121 - Silicon PNP Power Transistor

General Description

High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) Complement to Type 2SC5949 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications R

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isc Silicon PNP Power Transistor 2SA2121 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Complement to Type 2SC5949 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 220 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.