Datasheet Details
| Part number | 2SA2121 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.54 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA2121-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA2121.
| Part number | 2SA2121 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.54 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA2121-InchangeSemiconductor.pdf |
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·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Complement to Type 2SC5949 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 220 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA2121 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA2121 | Silicon PNP Transistor | Toshiba |
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