Datasheet Details
| Part number | 2SA2140 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.38 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA2140-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA2140 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.38 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA2140-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification and for TV VM circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA2140 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA2140 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA2140 | Silicon PNP Transistor | Panasonic Semiconductor |
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|---|---|
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