2SA2140 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification and for TV VM circuit. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA2140 Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.