Download 2SA473 Datasheet PDF
Inchange Semiconductor
2SA473
DESCRIPTION - Collector-Emitter Breakdown Voltage : V(BR)CEO= -30V(Min) - Good Linearity of h FE - plement to Type 2SC1173 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Power amplifier applications. - Car radio and car stereo output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -3 Emitter Current-Continuous Total Power Dissipation @ TC=25℃ Junction Temperature -3.0 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi....