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2SA473 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor 2SA473.

General Description

·Collector-Emitter Breakdown Voltage : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·plement to Type 2SC1173 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.

·Car radio and car stereo output stage applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.

2SA473 Distributor