Datasheet Details
| Part number | 2SA627 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.19 KB |
| Description | PNP Transistor |
| Datasheet | 2SA627_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistors 2SA627.
| Part number | 2SA627 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.19 KB |
| Description | PNP Transistor |
| Datasheet | 2SA627_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier and low speed switching ·Suitable for output stages of 30 ~50 watts audio amplifier and DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 60 W 150 ℃ Tstg Storage Temperature -65~＋150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA627 | Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SA626 | PNP Transistor |
| 2SA633 | POWER TRANSISTOR |
| 2SA634 | POWER TRANSISTOR |
| 2SA636 | POWER TRANSISTOR |
| 2SA636A | POWER TRANSISTOR |
| 2SA648 | PNP Transistor |
| 2SA649 | PNP Transistor |
| 2SA650 | PNP Transistor |
| 2SA651 | Silicon PNP Transistor |
| 2SA652 | Silicon PNP Power Transistor |